HN58X2508I Datasheet, PDF (6/29 Pages) Renesas Technology Corp – Electrically Erasable and Programmable Read Only Memory

HN58X2508I/HN58X2516I
DC Characteristics
Parameter
Input leakage current
Symbol Min
I_LI

Max
2
Output leakage current
I_LO

2
V_CC current
Standby I_SB

3
Active
I_CC1

2

2.5
Output voltage
I_CC2
V_OL1
V_OL2
V_OH1
V_OH2

2

3.0

0.4

0.4
V_CC × 0.8 
V_CC × 0.8 
Unit
µA
µA
µA
mA
mA
mA
mA
V
V
V
V
Test conditions
V_CC = 5.5 V, V_IN = 0 to 5.5 V
(S, D, C, HOLD, W)
V_CC = 5.5 V, V_OUT = 0 to 5.5
V
(Q)
V_IN = V_SS or V_CC,
V_CC = 5.5 V
V_CC = 3.6 V, Read at 5 MHz
V_IN = V_CC × 0.1/V_CC × 0.9
Q = OPEN
V_CC = 5.5 V, Read at 5 MHz
V_IN = V_CC × 0.1/V_CC × 0.9
Q = OPEN
V_CC = 3.6 V, Write at 5 MHz
V_IN = V_CC × 0.1/V_CC × 0.9
V_CC = 5.5 V, Write at 5 MHz
V_IN = V_CC × 0.1/V_CC × 0.9
V_CC = 5.5 V, I_OL = 2 mA
V_CC = 2.5 V, I_OL = 1.5 mA
V_CC = 5.5 V, I_OL = −2 mA
V_CC = 2.5 V, I_OL = −0.4 mA
Rev.2.00, Aug.19.2004, page 6 of 27