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M16C65_09 Datasheet, PDF (82/112 Pages) Renesas Technology Corp – RENESAS MCU | |||
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M16C/65 Group
5. Electrical Characteristics
Memory Expansion Mode and Microprocessor Mode
(in wait state setting 2Ï + 3Ï, 2Ï + 4Ï, 3Ï + 4Ï, and 4Ï + 5Ï, and
when accessing external area)
Read timing
t cyc
VCC1 = VCC2 = 5 V
BCLK
CSi
ADi
BHE
ALE
td(BCLK-CS)
25ns(max.)
td(BCLK-AD)
25ns(max.)
td(BCLK-ALE)
15ns(max.)
th(BCLK-ALE)
-4ns(min.)
RD
DBi
Hi-Z
Write timing
tcyc
td(BCLK-RD)
25ns(max.)
tac4(RD-DB)
(n à tcyc -45)ns(max.)
tsu(DB-RD)
40ns(min.)
th(BCLK-CS)
2ns(min.)
th(BCLK-AD)
2ns(min.)
th(RD-AD)
0ns(min.)
th(BCLK-RD)
0ns(min.)
th(RD-DB)
0ns(min.)
BCLK
td(BCLK-CS)
25ns(max.)
CSi
ADi
BHE
ALE
td(BCLK-AD)
25ns(max.)
td(BCLK-ALE)
15ns(max.)
th(BCLK-ALE)
-4ns(min.)
WR, WRL
WRH
DBi
Hi-Z
td(BCLK-WR)
25ns(max.)
td(BCLK-DB)
40ns(min.)
th(BCLK-CS)
2ns(min.)
th(BCLK-AD)
2ns(min.)
th(WR-AD)
(0.5 Ã tcyc-10)ns(min.)
th(BCLK-WR)
0ns(min.)
th(BCLK-DB)
2ns(min.)
1
tcyc = f(BCLK)
Measuring conditions
y VCC1 = VCC2 = 5 V
y Input timing voltage: VIL = 0.8 V, VIH = 2.0 V
y Output timing voltage: VOL = 0.4 V, VOH = 2.4 V
td(DB-WR)
{(n-0.5) Ã tcyc -40}ns(min.)
th(WR-DB)
(0.5 Ã tcyc -10)ns(min.)
n: 3 (when 2Ï + 3Ï)
4 (when 2Ï + 4Ï or 3Ï + 4Ï)
5 (when 4Ï + 5Ï)
Figure 5.17 Timing Diagram
REJ03B0257-0110 Rev.1.10 Sep 24, 2009
Page 82 of 109
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