M16C65_09 Datasheet, PDF (65/112 Pages) Renesas Technology Corp – RENESAS MCU

M16C/65 Group
5. Electrical Characteristics
V_CC1 = V_CC2 = 5 V
Table 5.22 Electrical Characteristics (4)
R5F3651KNFC, R5F3650KNFA, R5F3650KNFB, R5F3651KDFC, R5F3650KDFB, R5F3650KDFA,
R5F3651MNFC, R5F3650MNFA, R5F3650MNFB, R5F3651MDFC, R5F3650MDFA, R5F3650MDFB,
R5F3651NNFC, R5F3650NNFA, R5F3650NNFB, R5F3651NDFC, R5F3650NDFA, R5F3650NDFB
V_CC1 = V_CC2 = 4.2 to 5.5 V, V_SS = 0 V at T_opr = −20 to 85°C/−40 to 85°C, f_(BCLK) = 3225 MHz unless otherwise
specified.
Symbol Parameter
Measuring Condition
R_fXCIN
I_CC
Feedback resistance
XCIN
Power supply current High-speed mode
In single-chip, mode,
the output pin are
open and other pins
are V_SS
f_(BCLK) = 32 MHz
XIN = 4 MHz (square wave), PLL multiplied by 8
125 kHz on-chip oscillator stop
f_(BCLK) = 32 MHz, A/D conversion
XIN = 4 MHz (square wave), PLL multiplied by 8
125 kHz on-chip oscillator stop
f_(BCLK) = 20 MHz
XIN = 20 MHz (square wave)
125 kHz on-chip oscillator stop
40 MHz on-chip
Main clock stop
oscillator mode
40 MHz on-chip oscillator on, no division
125 kHz on-chip oscillator stop
125 kHz on-chip Main clock stop
oscillator mode
40 MHz on-chip oscillator stop
125 kHz on-chip oscillator on, no division
FMR22 = 1 (slow read mode)
Low-power mode
f_(BCLK) = 32 kHz
In low-power mode
FMR22 = FMR23 = 1
on flash memory ⁽¹⁾
f_(BCLK) = 32 kHz
In low-power mode
on RAM ⁽¹⁾
Wait mode
Main clock stop
40 MHz on-chip oscillator stop
125 kHz on-chip oscillator on
Peripheral clock operation
T_opr = 25°C
f_(BCLK) = 32 kHz (oscillation capacity High)
40 MHz on-chip oscillator stop
125 kHz on-chip oscillator stop
Peripheral clock operation
T_opr = 25°C
f_(BCLK) = 32 kHz (oscillation capacity low)
40 MHz on-chip oscillator stop
125 kHz on-chip oscillator stop
Peripheral clock operation
T_opr = 25°C
Stop mode
Main clock stop
40 MHz on-chip oscillator stop
125 kHz on-chip oscillator stop
Peripheral clock stop
T_opr = 25°C
During flash memory f_(BCLK) = 10 MHz, PM17 = 1 (one wait)
program
V_CC1 = 5.0 V
During flash memory f_(BCLK) = 10 MHz, PM17 = 1 (one wait)
erase
V_CC1 = 5.0 V
Standard
Unit
Min. Typ. Max.
8
MΩ
26.0
mA
27.0
mA
17.0
mA
18.0
mA
550.0
μA
170.0
μA
45.0
μA
20.5
μA
11.0
μA
6.0
μA
1.7
μA
20.0
mA
30.0
mA
Note:
1. This indicates the memory in which the program to be executed exists.
REJ03B0257-0110 Rev.1.10 Sep 24, 2009
Page 65 of 109