PD3719_15 Datasheet, PDF (8/22 Pages) Renesas Technology Corp – MOS INTEGRATED CIRCUIT

µPD3719
ELECTRICAL CHARACTERISTICS
TA = +25 °C, VOD = 15 V, VRD = 15 V, data rate (fφRB) = 2 MHz, storage time = 5.5 ms,
light source: 3200 K halogen lamp +C-500S (infrared cut filter, t = 1mm), input signal clock = 5 Vp-p
Parameter
Saturation voltage
Saturation exposure
Red
Green
Blue
Photo response non-uniformity
Average dark signal
Dark signal non-uniformity
Power consumption
Output impedance
Response
Red
Green
Blue
Image lag
Offset level ^Note1
Output fall delay time ^Note2
Total transfer efficiency
Response peak
Red
Green
Blue
Dynamic range
Reset feed-through noise ^Note1
Random noise
Symbol
Vsat
SER
SEG
SEB
PRNU
ADS
DSNU
PW
ZO
RR
RG
RB
IL
VOS
td
TTE
DR1
DR2
RFTN
σ
Test Conditions
VOUT = 2.5 V
Light shielding
Light shielding
VOUT = 2.5 V
VOUT = 2.5 V
VOUT = 2.5 V
Vsat /DSNU
Vsat /σ
Light shielding
Light shielding
MIN.
4.0
6.8
6.2
3.8
8.8
92
0
–
TYP.
5.0
0.52
0.57
0.94
6
0.8
1.5
400
0.5
9.7
8.8
5.3
2.0
10.8
70
98
630
540
460
3333
10000
1500
0.5
Notes 1. Refer to TIMING CHART 2.
2. When the fall time of φ1 (t1) is the TYP. value (refer to TIMING CHART 2).
MAX.
–
20
3.0
5.0
600
1
12.6
11.4
6.8
5.0
12.8
2500
–
Unit
V
lx•s
lx•s
lx•s
%
mV
mV
mW
kΩ
V/lx•s
V/lx•s
V/lx•s
%
V
ns
%
nm
nm
nm
times
times
mV
mV
6