NP90N04PUF_15 Datasheet, PDF (8/9 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

NP90N04PUF
PACKAGE DRAWING (Unit: mm)
TO-263 (MP-25ZP)
10.0 ±0.3
4
0.5
4.45 ±0.2
1.3 ±0.2
0.025
to 0.25
0.75 ±0.2
2.54
12 3
0.6 _±0.2
0 _{to 8˚}
0.25
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred.
6
Data Sheet D16717EJ1V0DS