NP90N04PUF_15 Datasheet, PDF (7/9 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

NP90N04PUF
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
6
ID = 45 A
Pulsed
4
VGS = 10 V
2
0
-80 -40 0 40 80 120 160 200
Tch - Channel Temperature - °C
1000
100
SWITCHING CHARACTERISTICS
tf
td(off)
td(on)
10
tr
1
0.1
1
VDD = 20 V
VGS = 10 V
RG = 0 Ω
10
100
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
VGS = 10 V
100
0V
10
1
0.1
Pulsed
0.01
0
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
10000
1000
Ciss
Coss
Crss
100
VGS = 0 V
f = 1 MHz
10
0.01
0.1
1
10
100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
35
14
ID = 90 A
30
VDD = 32 V
12
20 V
25
8V
10
20
8
15
VGS
6
10
4
5
VDS
2
0
0
0
20 40 60 80 100
QG - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
di/dt = 100 A /µs
V GS = 0 V
100
10
1
0.1
1
10
100
IF - Diode Forward Current - A
Data Sheet D16717EJ1V0DS
5