NP90N04PUF_15 Datasheet, PDF (6/9 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

NP90N04PUF
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
400
Puls ed
350
300
250
V GS = 10 V
200
150
100
50
0
0
0.5
1
1.5
VDS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
5
VDS = VGS
4
ID =250 µA
3
2
1
0
-80 -40 0 40 80 120 160 200
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
10
Pulsed
8
6
4
2
VGS = 10 V
0
1
10
100
1000
ID - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
1000
100
10
1
0.1
0.01
0
Tch = −55°C
25°C
75°C
150°C
175°C
VDS = 10 V
Pulsed
2
4
6
8
10
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
10
1
0.1
0.1
Tch = −55°C
25°C
75°C
150°C
175°C
VDS = 10 V
Pulsed
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
Pulsed
15
10
5
ID = 45 A
0
0
5
10
15
20
VGS - Gate to Source Voltage - V
4
Data Sheet D16717EJ1V0DS