NP110N04PDG-E1-AY Datasheet, PDF (8/10 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

PACKAGE DRAWING (Unit: mm)
TO-263 (MP-25ZP)
10.0 ±0.3
4
0.5
4.45 ±0.2
1.3 ±0.2
0.025
to 0.25
NP110N04PDG
0.75 ±0.2
2.54
12 3
0.6 _±0.2
0 _{to 8˚}
0.25
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
6
Data Sheet D17561EJ2V0DS