NP110N04PDG-E1-AY Datasheet, PDF (6/10 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

NP110N04PDG
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
500
400
VGS = 10 V
300
200
4.5 V
100
Pulsed
0
0
0.2
0.4
0.6
0.8
1
VDS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
3
2.5
2
1.5
1
0.5
VDS = VGS
ID = 10 mA
0
-100 -50 0
50 100 150 200
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
10
Pulsed
5
0
0.1
VGS = 4.5 V
10 V
1
10
100
ID - Drain Current - A
1000
FORWARD TRANSFER CHARACTERISTICS
1000
100
10
1
0.1
0.01
0.001
1
TA = −55°C
25°C
75°C
150°C
175°C
VDS = 10 V
Pulsed
2
3
4
5
6
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
TA = −55°C
25°C
75°C
150°C
175°C
10
1
0.1
VDS = 10 V
Pulsed
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
5
ID = 110 A
Pulsed
4
55 A
22 A
3
2
1
0
0
5
10
15
20
VGS - Gate to Source Voltage - V
4
Data Sheet D17561EJ2V0DS