NP110N04PDG-E1-AY Datasheet, PDF (3/10 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP110N04PDG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP110N04PDG is N-channel MOS Field Effect Transistor designed for high current switching applications.
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ORDERING INFORMATION
PART NUMBER
LEAD PLATING
NP110N04PDG-E1-AZ ^Note
Pure Sn (Tin)
NP110N04PDG-E2-AZ ^Note
Note See “TAPE INFORMATION”
PACKING
Tape
800 p/reel
PACKAGE
TO-263 (MP-25ZP)
typ. 1.5 g
FEATURES
• Channel temperature 175 degree rating
• Super low on-state resistance
RDS(on)1 = 1.8 mΩ MAX. (VGS = 10 V, ID = 55 A)
RDS(on)2 = 3.2 mΩ MAX. (VGS = 4.5 V, ID = 55 A)
(TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
40
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ^Note1
ID(DC)
±110
A
ID(pulse)
±440
A
Total Power Dissipation (TA = 25°C)
PT1
1.8
W
Total Power Dissipation (TC = 25°C)
PT2
288
W
Channel Temperature
Tch
175
°C
Storage Temperature
Tstg
−55 to +175
°C
Repetitive Avalanche Current ^Note2
IAR
72
A
Repetitive Avalanche Energy ^Note2
EAR
518
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.52
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17561EJ2V0DS00 (2nd edition)
Date Published June 2006 NS CP(K)
Printed in Japan
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2005