NP110N04PDG-E1-AY Datasheet, PDF (7/10 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
4
3.5
3
VGS = 4.5 V
2.5
2
1.5
10 V
1
ID = 55 A
0.5
Pulsed
0
-100 -50 0 50 100 150 200
Tch - Channel Temperature - °C
10000
SWITCHING CHARACTERISTICS
1000
100
10
1
0.1
td(off)
tr
td(on)
tf VDD = 20 V
VGS = 10 V
RG = 0 Ω
1
10
100
ID - Drain Current - A
1000
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
VGS = 10 V
0V
10
1
Pulsed
0.1
0
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
NP110N04PDG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
10000
VGS = 0 V
f = 1 MHz
Ciss
1000
Coss
Crss
100
0.1
1
10
100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50
10
40
VDD = 32 V
8
20 V
8V
30
6
20
VGS
4
10
0
0
2
VDS
ID = 110 A
0
50
100 150 200 250
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
1
0.1
di/dt = 100 A/μs
VGS = 0 V
1
10
100
IF - Diode Forward Current - A
1000
Data Sheet D17561EJ2V0DS
5