HAF2005_15 Datasheet, PDF (8/10 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Series Power Switching

HAF2005
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
12
10
8
V_DD = 9 V
6
16 V
4
2
0
0.1
1
10
100
Shutdown Time of Load-Short Test PW (S)
Shutdown Case Temperature vs.
Gate to Source Voltage
200
180
160
140
120
I_D = 5 A
100
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
Tc = 25°C
0.5
0.3
0.2
0.1 _0.1
0.05
0.03
0.02
0.01
1shot ^pulse
0.01
10 µ
100 µ
θch – c (t) = γ s (t) • θch – c
θch – c = 4.17°C/W, Tc = 25°C
P_DM
D = ^PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Waveform
Vin Monitor
D.U.T.
Vout
Monitor
R_L
Vin
5V
50 Ω
V_DD
= 30 V
Vin
Vout
10%
10%
td(on)
90%
tr
90%
90%
td(off)
10%
tf
Rev.4.00 Sep 07, 2005 page 6 of 7