HAF2005_15 Datasheet, PDF (6/10 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Series Power Switching

HAF2005
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
100
10 V
80
8V
6V
5V
Pulse Test
60
4V
40
V_GS = 3.5 V
20
0
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.5
Pulse Test
0.4
I_D = 20 A
0.3
0.2
10 A
0.1
5A
0
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Rev.4.00 Sep 07, 2005 page 4 of 7
Maximum Safe Operation Area
500
Thermal shut down
200 ^{Operation area}
100
10 µs
50
20
10
5
2
1
OtlihmpisietearadretiboaDyniCsRinO_D^p_S^er_(o^a_n^tiP_{)oWn (=Tc110=mm21s5s0°}^0C)µs
0.5 _{Ta = 25°C}
0.3
0.3 0.5 1 2
5 10 20 50 100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
50
40
Tc = –25°C
25°C
30
20
75°C
10
V_DS = 10 V
Pulse Test
0
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
50
V_GS = 4 V
20
10
10 V
5
2
Pulse Test
1
1 2 5 10 20
50 100 200
Drain Current I_D (A)