HAF2005_15 Datasheet, PDF (4/10 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Series Power Switching

HAF2005
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Ta = 25°C
Symbol
VDSS
VGSS
VGSS
ID
ID (pulse) ^{Note 1}
IDR
Pch ^{Note 2}
Tch
Tstg
Value
60
16
–2.5
40
80
40
30
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
A
A
A
W
°C
°C
Typical Operation Characteristics
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Symbol
VIH
VIL
IIH1
IIH2
IIL
IIH (sd) 1
IIH (sd) 2
Tsd
VOP
Min
Typ
Max
Unit
Test Conditions
3.5
—
—
V
—
—
1.2
V
—
—
100
µA Vi = 8 V, VDS = 0
—
—
50
µA Vi = 3.5 V, VDS = 0
—
—
1
µA Vi = 1.2 V, VDS = 0
—
0.8
—
mA Vi = 8 V, VDS = 0
—
0.35
—
mA Vi = 3.5 V, VDS = 0
—
175
—
°C Channel temperature
3.5
—
12
V
Rev.4.00 Sep 07, 2005 page 2 of 7