HAF2005_15 Datasheet, PDF (7/10 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Series Power Switching

HAF2005
Static Drain to Source on State Resistance
vs. Temperature
0.10
Pulse Test
0.08
0.06
0.04
V_GS = 4 V
5 A, 10 A
I_D = 20 A
0.02
0
–40
I_D = 20 A
5 A, 10 A
10 V
0
40 80 120 160
Case Temperature Tc (°C)
1000
500
Body-Drain Diode Reverse
Recovery Time
200
100
50
20
10
0.5 1 2
di / dt = 50 A / µs
V_GS = 0, Ta = 25°C
5 10 20 50
Reverse Drain Current I_DR (A)
Reverse Drain Current vs.
Source to Drain Voltage
50
Pulse Test
40
V_GS = 5 V
30
0V
20
10
0
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Forward Transfer Admittance vs.
Drain Current
100
V_DS = 10 V
50
Pulse Test
Tc = –25°C
20
10
25°C
5
75°C
2
1
0.5 1 2
5 10 20 50
Drain Current I_D (A)
1000
500
Switching Characteristics
V_GS = 5 V, V_DD = 30 V
PW = 300 µs, duty ≤ 1 %
200
100
tr
50
20
10
0.5
td(on)
12
tf
td(off)
5 10 20 50
Drain Current I_D (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
Coss
300
100
30 _{VGS = 0}
f = 1 MHz
10
0
10
20
30
40
50
Drain to Source Voltage V_DS (V)
Rev.4.00 Sep 07, 2005 page 5 of 7