BB502C_11 Datasheet, PDF (8/11 Pages) Renesas Technology Corp – Built in Biasing Circuit MOS FET IC UHF RF Amplifier

BB502C
S11 Parameter vs. Frequency
.8 ¹
.6
.4
.2
1.5
2
3
4
5
10
0
.2 .4 .6 .8 1 1.5 2 3 4 5 10
–10
–.2
–5
–4
–3
–.4
–2
–.6
–.8 _–1
–1.5
Test Condition; V_DS = 5 V , V_G1 = 5 V
V_G2S = 4 V , R_G = 180 kΩ ,
Zo = 50Ω
50 to 1000 MHz (50 MHz step)
S12 Parameter vs. Frequency
90° ^{Scale: 0.002 / div.}
120°
60°
150°
30°
180°
0°
–150°
–30°
–120°
–90°
–60°
Test Condition: V_DS = 5 V , V_G1 = 5 V
V_G2S = 4 V , R_G = 180 kΩ ,
Zo = 50Ω
50 to 1000 MHz (50 MHz step)
Preliminary
S21 Parameter vs. Frequency
90° ^{Scale: 1 / div.}
120°
60°
150°
30°
180°
0°
–150°
–30°
–120°
–90°
–60°
Test Condition: V_DS = 5 V , V_G1 = 5 V
V_G2S = 4 V , R_G = 180 kΩ ,
Zo = 50Ω
50 to 1000 MHz (50 MHz step)
S22 Parameter vs. Frequency
.8 ¹
.6
.4
.2
1.5
2
3
4
5
10
0
.2 .4 .6 .8 1 1.5 2 3 4 5 10
–10
–.2
–.4
–.6
–.8 _–1
–5
–4
–3
–2
–1.5
Test Condition: V_DS = 5 V , V_G1 = 5 V
V_G2S = 4 V , R_G = 180 kΩ ,
Zo = 50Ω
50 to 1000 MHz (50 MHz step)
R07DS0283EJ0700 Rev.7.00
Mar 28, 2011
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