BB502C_11 Datasheet, PDF (1/11 Pages) Renesas Technology Corp – Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Preliminary Datasheet
BB502C
Built in Biasing Circuit MOS FET IC
UHF RF Amplifier
R07DS0283EJ0700
(Previous: REJ03G0832-0600)
Rev.7.00
Mar 28, 2011
Features
• Built in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise; NF = 1.6 dB typ. at f = 900 MHz
• High gain; PG = 22 dB typ. at f = 900 MHz
• Withstanding to ESD;
Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; CMPAK-4(SOT-343mod)
Outline
Notes:
RENESAS Package code: PTSP0004ZA-A
(Package name: CMPAK-4)
2
3
1
4
1. Marking is “BS–”.
2. BB502C is individual type number of RENESAS BBFET.
1. Source
2. Gate1
3. Gate2
4. Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate1 to source voltage
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V_DS
V_G1S
V_G2S
I_D
Pch
Tch
Tstg
Ratings
6
+6
−0
+6
−0
20
100
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
mA
mW
°C
°C
R07DS0283EJ0700 Rev.7.00
Mar 28, 2011
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