BB502C_11 Datasheet, PDF (7/11 Pages) Renesas Technology Corp – Built in Biasing Circuit MOS FET IC UHF RF Amplifier

BB502C
Drain Current vs. Gate Resistance
20
V_DS = V_G1 = 5 V
15
V_G2S = 4 V
10
5
0
100
200
500
1000
Gate Resistance R_G (kΩ)
Noise Figure vs.
Gate2 to Source Voltage
5
V_DS = 5 V
R_G = 180 kΩ
4
f = 900 MHz
3
2
1
1
2
3
4
Gate2 to Source Voltage V_G2S (V)
Gain Reduction vs.
Gate2 to Source Voltage
0
10
20
30
V_DS = V_G1 = 5 V
40
V_G2S = 4 V
R_G = 180 kΩ
50
4
3
2
1
0
Gate2 to Source Voltage V_G2S (V)
R07DS0283EJ0700 Rev.7.00
Mar 28, 2011
Preliminary
Power Gain vs.
Gate2 to Source Voltage
25
20
15
10
5
V_DS = 5 V
R_G = 180 kΩ
f = 900 MHz
0
1
2
3
4
Gate2 to Source Voltage V_G2S (V)
Input Capacitance vs.
Gate2 to Source Voltage
4
3
2
1 ^VDS ^{= 5 V}
R_G = 180 kΩ
f = 1 MHz
0
0
1
2
3
4
Gate2 to Source Voltage V_G2S (V)
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