BB502C_11 Datasheet, PDF (2/11 Pages) Renesas Technology Corp – Built in Biasing Circuit MOS FET IC UHF RF Amplifier

BB502C
Preliminary
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate1 to source breakdown voltage
Gate2 to source breakdown voltage
Gate1 to source cutoff current
Gate2 to source cutoff current
Gate1 to source cutoff voltage
Gate2 to source cutoff voltage
Drain current
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Noise figure
Symbol
V_(BR)DSS
V_(BR)G1SS
V_(BR)G2SS
I_G1SS
I_G2SS
V_G1S(off)
Min
6
+6
+6
—
—
0.5
V_G2S(off)
0.5
I_D(op)
8
|y_fs|
20
Ciss
1.4
Coss
0.7
Crss
—
PG
17
NF
—
Typ
—
—
—
—
—
0.7
0.7
11
25
1.7
1.1
0.02
22
1.6
Max
—
—
—
+100
+100
1.0
1.0
14
30
2.0
1.5
0.05
—
2.2
Unit
V
V
V
nA
nA
V
V
mA
mS
pF
pF
pF
dB
dB
(Ta = 25°C)
Test conditions
I_D = 200 μA, V_G1S = V_G2S = 0
I_G1 = +10 μA, V_G2S = V_DS = 0
I_G2 = +10 μA, V_G1S = V_DS = 0
V_G1S = +5 V, V_G2S = V_DS = 0
V_G2S = +5 V, V_G1S = V_DS = 0
V_DS = 5 V, V_G2S = 4 V
I_D = 100 μA
V_DS = 5 V, V_G1S = 5 V
I_D = 100 μA
V_DS = 5 V, V_G1 = 5 V
V_G2S = 4 V, R_G = 180 kΩ
V_DS = 5 V, V_G1 = 5 V, V_G2S =4 V
R_G = 180 kΩ, f = 1 kHz
V_DS = 5 V, V_G1 = 5 V
V_G2S =4 V, R_G = 180 kΩ
f = 1 MHz
V_DS = 5 V, V_G1 = 5 V
V_G2S =4 V, R_G = 180 kΩ
f = 900 MHz
R07DS0283EJ0700 Rev.7.00
Mar 28, 2011
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