R1LV0216BSB Datasheet, PDF (7/16 Pages) Renesas Technology Corp – 2Mb Advanced LPSRAM (128k word x 16bit)

R1LV0216BSB
Read Cycle
Parameter
Read cycle time
Address access time
Chip select access time
Output enable to output valid
Output hold from address change
LB#, UB# access time
Chip select to output in low-Z
LB#, UB# enable to low-Z
Output enable to output in low-Z
Chip deselect to output in high-Z
LB#, UB# disable to high-Z
Output disable to output in high-Z
R1LV0216BSB-5S*
R1LV0216BSB-7S*
Symbol
Unit
Note
Min.
Max.
Min.
Max.
t_RC
55
-
70
-
ns
t_AA
-
55
-
70
ns
t_ACS
-
55
-
70
ns
t_OE
-
30
-
35
ns
t_OH
10
-
10
-
ns
t_BA
-
55
-
70
ns
t_CLZ
10
-
10
-
ns
2,3
t_BLZ
10
-
10
-
ns
2,3
t_OLZ
5
-
5
-
ns
2,3
t_CHZ
0
20
0
25
ns
1,2,3
t_BHZ
0
20
0
25
ns
1,2,3
t_OHZ
0
20
0
25
ns
1,2,3
R10DS0051EJ0100 Rev.1.00
2011.03.30
Page 7 of 14