R1LV0216BSB Datasheet, PDF (4/16 Pages) Renesas Technology Corp – 2Mb Advanced LPSRAM (128k word x 16bit)

R1LV0216BSB
Operation Table
CS#
LB#
H
X
X
H
L
L
L
L
L
L
L
H
L
H
L
H
L
L
L
L
L
L
Note 1. H: V_IH L:V_IL
UB#
WE#
X
X
H
X
H
L
H
H
H
H
L
L
L
H
L
H
L
L
L
H
L
H
X: V_IH or V_IL
OE#
X
X
X
L
H
X
L
H
X
L
H
DQ0~7
High-Z
High-Z
Din
Dout
High-Z
High-Z
High-Z
High-Z
Din
Dout
High-Z
DQ8~15
High-Z
High-Z
High-Z
High-Z
High-Z
Din
Dout
High-Z
Din
Dout
High-Z
Operation
Stand-by
Stand-by
Write in lower byte
Read in lower byte
Output disable
Write in upper byte
Read in upper byte
Output disable
Word write
Word read
Output disable
Absolute Maximum
Parameter
Symbol
Value
unit
Power supply voltage relative to Vss
Vcc
-0.5 to +4.6
V
Terminal voltage on any pin relative to Vss
V_T
-0.5^*1 to Vcc+0.5^*2
V
Power dissipation
P_T
0.7
W
Operation temperature
Topr^*3
R Ver.
I Ver.
0 to +70
°C
-40 to +85
Storage temperature range
Tstg
-65 to 150
°C
Storage temperature range under bias
Tbias^*3
R Ver.
I Ver.
0 to +70
°C
-40 to +85
Note 1. –3.0V for pulse ≤ 30ns (full width at half maximum)
2. Maximum voltage is +4.6V.
3. Ambient temperature range depends on R/I-version. Please see table on page 1.
R10DS0051EJ0100 Rev.1.00
2011.03.30
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