NP82N10PUF_15 Datasheet, PDF (7/9 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP82N10PUF
Package Drawings (Unit: mm)
TO-263 (MP-25ZP) (Mass: 1.5 g TYP.)
No plating
10.0 ±0.3
7.88 MIN.
4
0.5
4.45 ±0.2
1.3 ±0.2
0.025
to 0.25
Chapter Title
Equivalent Circuit
0.75 ±0.2
2.54
12 3
0.6 _±0.2
0 _{to 8˚}
0.25
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Gate
Drain
Body
Diode
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static
electricity as much as possible, and quickly dissipate it once, when it has occurred.
R07DS0444EJ0100 Rev.1.00
Aug 26, 2011
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