NP82N10PUF_15 Datasheet, PDF (4/9 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP82N10PUF
Typical Characteristics (T_A = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
T_C - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
100
RDS(ON) Limited
(VGS = 10 V)
ID(Pulse) = 164 A
PW = 100 µs
10
Power Dissipation Limited
1 ms
Secondary Brakedown Limited
1
TC = 25°C
Single Pulse
10 ms
0.1
0.1
1
10
100
V_DS - Drain to Source Voltage - V
Chapter Title
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
160
140
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
T_C - Case Temperature - °C
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
Rth(ch-A) = 83.3°C/W
100
10
Rth(ch-C) = 1.00°C/W
1
0.1
Single pulse
0.01
100 μ
1m
10 m 100 m
1
10
100
1000
PW - Pulse Width - s
R07DS0444EJ0100 Rev.1.00
Aug 26, 2011
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