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| NP82N10PUF_15 Datasheet, PDF (1/9 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR | |||
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NP82N10PUF
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0444EJ0100
Rev.1.00
Aug 26, 2011
Description
The NP82N10PUF is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
⢠Super low on-state resistance
⯠RDS(on) = 15 mΩ MAX. (VGS = 10 V, ID = 41 A)
⢠Low Ciss: Ciss = 2900 pF TYP. (VDS = 25 V, VGS = 0 V)
⢠Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
Lead Plating
Packing
NP82N10PUF-E1-AY â1
Pure Sn (Tin)
Tape 800 p/reel
Taping (E1 type)
NP82N10PUF-E2-AY â1
Taping (E2 type)
Note: â1. Pb-free (This product does not contain Pb in the external electrode.)
Package
TO-263 (MP-25ZP)
R07DS0444EJ0100 Rev.1.00
Aug 26, 2011
Page 1 of 7
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