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| NP82N10PUF_15 Datasheet, PDF (2/9 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR | |||
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NP82N10PUF
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) â1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current â2
Single Avalanche Energy â2
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAS
EAS
Ratings
100
±20
±82
±164
150
1.8
175
-55 to +175
34
117
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance â2
Rth(ch-C)
Rth(ch-A)
1.00
83.3
°C/W
°C/W
Notes: â1. TC = 25°C, PW ⤠10 μs, Duty Cycle ⤠1%
â2. Tch(start) = 25°C, VDD = 50 V, RG = 25 Ω, L = 100 μH, VGS = 20 V â 0 V
Chapter Title
Unit
V
V
A
A
W
W
°C
°C
A
mJ
R07DS0444EJ0100 Rev.1.00
Aug 26, 2011
Page 2 of 7
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