NP60N04HLF_15 Datasheet, PDF (7/9 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

NP60N04HLF,NP60N04ILF
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
16
ID = 30 A
Pulsed
12
VGS = 4.5 V
8
10 V
4
0
-100 -50 0 50 100 150 200
Tch - Channel Temperature - °C
1000
100
SWITCHING CHARACTERISTICS
VDD = 20 V
VGS = 10 V
RG = 0 Ω
td(off)
tf
10
tr
td(on)
1
0.1
1
10
100
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
10
1
VGS = 10 V
4.5 V
0V
0.1
Pulsed
0.01
0
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
VGS = 0 V
f = 1 MHz
Ciss
1000
Coss
Crss
100
0.1
1
10
100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50
10
40
VDD = 32 V
20 V
8V
30
VGS
8
6
20
4
10
0
0
VDS
10
20
ID = 60 A ²
Pulsed
0
30
40
50
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
di/dt = 100 A/µs
VGS = 0 V
10
0.1
1
10
100
IF - Diode Forward Current - A
Data Sheet D16793EJ1V0DS
5