NP60N04HLF_15 Datasheet, PDF (3/9 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP60N04HLF,NP60N04ILF
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP60N04HLF and NP60N04ILF are N-channel
MOS Field Effect Transistors designed for high current
switching applications.
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP60N04HLF
TO-251 (MP-3)
NP60N04ILF
TO-252 (MP-3Z)
FEATURES
• Super low on-state resistance
RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 30 A)
RDS(on)2 = 9.1 mΩ MAX. (VGS = 4.5 V, ID = 30 A)
• Low Ciss: Ciss = 2600 pF TYP. (VDS = 25 V, VGS = 0 V)
• Built-in gate protection diode
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
40
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C) ^Note1
ID(DC)
±60
A
Drain Current (pulse) ^Note2
ID(pulse)
±240
A
Total Power Dissipation (TC = 25°C)
PT1
100
W
Total Power Dissipation (TA = 25°C)
PT2
1.2
W
Channel Temperature
Tch
175
°C
Storage Temperature
Repetitive Avalanche Current ^Note3
Repetitive Avalanche Energy ^Note3
Tstg
−55 to +175
°C
IAR
32
A
EAR
100
mJ
Notes 1. Calculated contact current according to MAX. allowable channel temperature.
2. PW ≤ 10 µs, Duty Cycle ≤ 1%
3. VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, Tch(peak) ≤ 150°C
(TO-252)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16793EJ1V0DS00 (1st edition)
Date Published December 2003 NS CP(K)
Printed in Japan
2003