NP60N04HLF_15 Datasheet, PDF (6/9 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

NP60N04HLF,NP60N04ILF
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
300
Pulsed
250
VGS = 10 V
200
150
4.5 V
100
50
0
0
0.5
1
1.5
2
2.5
VDS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
3
V DS = V GS
2.5
ID = 250 µA
2
1.5
1
0.5
0
-100 -50 0 50 100 150 200
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
20
Pulsed
16
12
VGS = 4.5 V
8
10 V
4
0
1
10
100
1000
ID - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
1000
100
TA = 150°C
10
75°C
25°C
1
−55°C
0.1
0.01
0.001
0
VDS = 10 V
Pulsed
1
2
3
4
5
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
TA = 150°C
75°C
25°C
−55°C
10
1
0.1
VDS = 10 V
Pulsed
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
Pulsed
16
ID = 60 A
30 A
12 A
12
8
4
0
0
4
8
12
16
20
VGS - Gate to Source Voltage - V
4
Data Sheet D16793EJ1V0DS