NP60N04HLF_15 Datasheet, PDF (5/9 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

NP60N04HLF,NP60N04ILF
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
100
RDS(on) Limited
(at VGS = 10 V)
ID(DC)
ID(pulse)
PW = 100 µs
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
10
1
Single pulse
TC = 25°C
0.1
0.1
1
DC
10
1 ms
10 ms
100
VDS - Drain to Source Voltage - V
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 125°C/W
10
1
Rth(ch-C) = 1.5°C/W
0.1
0.01
0.001
100 µ
Single pulse
1m
10 m 100 m
1
10
PW - Pulse Width - s
100
1000
Data Sheet D16793EJ1V0DS
3