NP40N10YDF_13 Datasheet, PDF (7/11 Pages) Renesas Technology Corp – 100 V – 40 A – N-channel Power MOS FET Application: Automotive

NP40N10YDF, NP40N10VDF, NP40N10PDF
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
70
VGS = 4.5 V
60
5.0 V
50
10 V
40
30
20
10
0
–100 –50 0
I_D = 20 A
Pulsed
50 100 150 200
T_ch - Channel Temperature - °C
1000
100
SWITCHING CHARACTERISTICS
V_DD = 50 V
V_GS = 10 V
R_G = 0 Ω
td(off)
td(on)
10
tr
tf
1
0.1
1
10
100
I_D - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
VGS = 10 V
0V
10
1
0.1
0
Pulsed
0.2 0.4 0.6 0.8
1
V_F(S-D) - Source to Drain Voltage - V
Preliminary
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
Coss
100
Crss
V_GS = 0 V
f = 1 MHz
10
0.01
0.1
1
10
100
V_DS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
90
12
VDD = 80 V
80
50 V
10
70
20 V
60
8
50
VGS
6
40
30
4
20
2
10
VDS
I_D = 40 A
0
0
0
10
20
30
40
50
Q_G- Gate Charge - nC
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
di/dt = 100 A/μs
V_GS = 0 V
1
0.1
1
10
100
I_F - Drain Current - A
R07DS0361EJ0201 Rev.2.01
May 13, 2013
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