NP40N10YDF_13 Datasheet, PDF (5/11 Pages) Renesas Technology Corp – 100 V – 40 A – N-channel Power MOS FET Application: Automotive

NP40N10YDF, NP40N10VDF, NP40N10PDF
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH (NP40N10YDF)
1000
100
R_th(ch-A) = 150°C/W
Preliminary
10
R_th(ch-C) = 1.25°C/W
1
0.1
Single pulse
Mounted on glass epoxy substrate of 40 mm × 40 mm × 1.6 mmt
with 4% copper area (35 μm)
0.01
100 μ
1m
10 m 100 m
1
10
100
PW - Pulse Width - s
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH (NP40N10VDF)
1000
R_th(ch-A) = 125°C/W
100
10
R_th(ch-C) = 1.25°C/W
1
0.1
Single pulse
Mounted on glass epoxy substrate of 40 mm × 40 mm × 1.6 mmt
with 4% copper area (35 μm)
0.01
100 μ
1m
10 m 100 m
1
10
100
PW - Pulse Width - s
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH (NP40N10PDF)
1000
100
R_th(ch-A) = 83.3°C/W
10
R_th(ch-C) = 1.25°C/W
1
0.1
Single Pulse
0.01
100 μ
1m
R07DS0361EJ0201 Rev.2.01
May 13, 2013
10 m 100 m
1
10
PW - Pulse Width - s
100
1000
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