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NP40N10YDF_13 Datasheet, PDF (3/11 Pages) Renesas Technology Corp – 100 V – 40 A – N-channel Power MOS FET Application: Automotive
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NP40N10YDF, NP40N10VDF, NP40N10PDF
Electrical Characteristics (TA = 25°C)
Item
Symbol Min
Zero Gate Voltage Drain Current IDSS
Gate Leakage Current
IGSS
Gate to Source Threshold Voltage VGS(th)
1.5
Forward Transfer Admittance ∗1
| yfs |
20
Drain to Source
On-state
Resistance ∗1
NP40N10YDF
RDS(on)1
RDS(on)2
RDS(on)3
NP40N10VDF RDS(on)1
RDS(on)2
RDS(on)3
NP40N10PDF RDS(on)1
RDS(on)2
RDS(on)3
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-on Delay Time
td(on)
Rise Time
tr
Turn-off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
QG
Gate to Source Charge
QGS
Gate to Drain Charge
Body Diode Forward Voltage ∗1
QGD
VF(S-D)
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
Note: *1. Pulsed test
Typ
2.0
40
21
23
24
21
23
24
21
23
24
2100
200
80
15
16
60
5
47
8
12
0.9
67
162
Max
1
±100
2.5
25
30
36
26
31
37
27
32
38
3150
300
144
33
40
120
13
71
1.5
Preliminary
Unit
μA
nA
V
S
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Test Conditions
VDS = 100 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 250 μA
VDS = 5.0 V, ID = 20 A
VGS = 10 V, ID = 20 A
VGS = 5.0 V, ID = 20 A
VGS = 4.5 V, ID = 20 A
VGS = 10 V, ID = 20 A
VGS = 5.0 V, ID = 20 A
VGS = 4.5 V, ID = 20 A
VGS = 10 V, ID = 20 A
VGS = 5.0 V, ID = 20 A
VGS = 4.5 V, ID = 20 A
VDS = 25 V,
VGS = 0 V,
f = 1 MHz
VDD = 50 V, ID = 20 A,
VGS = 10 V,
RG = 0 Ω
VDD = 80 V,
VGS = 10 V,
ID = 40 A
IF = 40 A, VGS = 0 V
IF = 40 A, VGS = 0 V,
di/dt = 100 A/μs
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
L
PG.
VGS = 20 → 0 V
50 Ω
VDD
BVDSS
ID IAS
VDD
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
PG.
RG
VGS
0
τ
τ = 1 μs
Duty Cycle ≤ 1%
RL
VGS
VGS
Wave Form
10%
0
VDD
VDS
90%
VDS
VDS
0
Wave Form
td(on)
90%
VGS
90%
10% 10%
tr td(off)
tf
ton
toff
R07DS0361EJ0201 Rev.2.01
May 13, 2013
Page 3 of 9
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