NP40N10YDF_13 Datasheet, PDF (1/11 Pages) Renesas Technology Corp – 100 V – 40 A – N-channel Power MOS FET Application: Automotive

Preliminary Data Sheet
NP40N10YDF, NP40N10VDF, NP40N10PDF
100 V – 40 A – N-channel Power MOS FET
Application: Automotive
R07DS0361EJ0201
Rev.2.01
May 13, 2013
Description
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
• Low on-state resistance
⎯ R_DS(on) = 25 mΩ MAX. (V_GS = 10 V, I_D = 20 A) (NP40N10YDF)
⎯ R_DS(on) = 26 mΩ MAX. (V_GS = 10 V, I_D = 20 A) (NP40N10VDF)
⎯ R_DS(on) = 27 mΩ MAX. (V_GS = 10 V, I_D = 20 A) (NP40N10PDF)
• Low C_iss: C_iss = 2100 pF TYP. (V_DS = 25 V, V_GS = 0 V)
• Logic level drive type
• Designed for automotive application and AEC-Q101 qualified
Outline
Drain
Gate
Body
Diode
Source
8-pin HSON
87 ^{6 5}
TO-252
4
TO-263
4
2 ³⁴
1
2
3
1
2
3
1
1, 2, 3 : Source
4
: Gate
5, 6, 7, 8: Drain
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred.
Ordering Information
Part No.
NP40N10YDF-E1-AY ^*1
NP40N10YDF-E2-AY ^*1
NP40N10VDF-E1-AY ^*1
NP40N10VDF-E2-AY ^*1
NP40N10PDF-E1-AY ^*1
NP40N10PDF-E2-AY ^*1
Lead Plating
Pure Sn (Tin)
Pure Sn (Tin)
Pure Sn (Tin)
Packing
Tape 2500 p/reel
Taping (E1 type)
Taping (E2 type)
Tape 2500 p/reel
Taping (E1 type)
Taping (E2 type)
Tape 800 p/reel
Taping (E1 type)
Taping (E2 type)
Note: *1. Pb-free (This product does not contain Pb in the external electrode)
Package
8-pin HSON
TO-252 (MP-3ZP)
TO-263 (MP-25ZP)
R07DS0361EJ0201 Rev.2.01
May 13, 2013
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