NP40N10YDF Datasheet, PDF (7/11 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP40N10YDF, NP40N10VDF, NP40N10PDF
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
70
VGS = 4.5 V
60
5.0 V
50
10 V
40
30
20
10
ID = 20 A
Pulsed
0
-100 -50 0 50 100 150 200
T_ch - Channel Temperature - °C
1000
100
SWITCHING CHARACTERISTICS
VDD = 50 V
VGS = 10 V
RG = 0 Ω
td(off)
td(on)
10
tr
tf
1
0.1
1
10
100
I_D - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
VGS = 10 V
0V
10
1
0.1
0
Pulsed
0.2
0.4
0.6
0.8
1
V_F(S-D) - Source to Drain Voltage - V
Chapter Title
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
Ciss
100
10
VGS = 0 V
f = 1MHz
1
0.01
0.1
1
Coss
Crss
10
100
V_DS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
90
80
70
60
50
40
30
20
10
0
0
VDD = 80 V
50 V
20 V
12
10
8
VGS
6
4
VDS
10
20
2
ID = 40 A
0
30
40
50
Q_G - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
1
0.1
di/dt = 100 A/μs
VGS = 0 V
1
10
100
I_F - Drain Current - A
R07DS0361EJ0100 Rev.1.00
Jun 07, 2011
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