NP40N10YDF Datasheet, PDF (1/11 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

Preliminary Data Sheet
NP40N10YDF, NP40N10VDF, NP40N10PDF ^{R07DS0361EJ0100}
Rev.1.00
MOS FIELD EFFECT TRANSISTOR
Jun 07, 2011
Description
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
• Low on-state resistance
⎯ R_DS(on) = 25 mΩ MAX. (V_GS = 10 V, I_D = 20 A) (NP40N10YDF)
⎯ R_DS(on) = 26 mΩ MAX. (V_GS = 10 V, I_D = 20 A) (NP40N10VDF)
⎯ R_DS(on) = 27 mΩ MAX. (V_GS = 10 V, I_D = 20 A) (NP40N10PDF)
• Low C_iss: C_iss = 2100 pF TYP. (V_DS = 25 V, V_GS = 0 V)
• Logic level drive type
• Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
Lead Plating
Packing
NP40N10YDF-E1-AY ^∗1
Pure Sn (Tin)
Tape 2500 p/reel Taping (E1 type)
NP40N10YDF-E2-AY ^∗1
Taping (E2 type)
NP40N10VDF-E1-AY ^∗1
Pure Sn (Tin)
Tape 2500 p/reel Taping (E1 type)
NP40N10VDF-E2-AY ^∗1
Taping (E2 type)
NP40N10PDF-E1-AY ^∗1
Pure Sn (Tin)
Tape 800 p/reel
Taping (E1 type)
NP40N10PDF-E2-AY ^∗1
Taping (E2 type)
Note: ^∗1. Pb-free (This product does not contain Pb in the external electrode.)
Package
8-pin HSON
TO-252 (MP-3ZP)
TO-263 (MP-25ZP)
R07DS0361EJ0100 Rev.1.00
Jun 07, 2011
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