NP40N10YDF Datasheet, PDF (5/11 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP40N10YDF, NP40N10VDF, NP40N10PDF
Chapter Title
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH (NP40N10YDF)
1000
100
Rth(ch-A) = 150°C/W
10
1
0.1
0.01
100
μ
Rth(ch-C) = 1.25°C/W
Single pulse
Mounted on glass epoxy substrate of 40 mm×40 mm×1.6 mmt
with 4% copper area (35 μm)
1m
10 m 100 m
1
10
100
1000
PW - Pulse Width - s
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH (NP40N10VDF)
1000
100
Rth(ch-A) = 125°C/W
10
1
0.1
0.01
100 μ
Rth(ch-C) = 1.25°C/W
Single pulse
Mounted on glass epoxy substrate of 40 mm×40 mm×1.6 mmt
with 4% copper area (35 μm)
1m
10 m 100 m
1
10
100
1000
PW - Pulse Width - s
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH (NP40N10PDF)
1000
100
Rth(ch-A) = 83.3°C/W
10
Rth(ch-C) = 1.25°C/W
1
R07DS0361EJ0100 Rev.1.00
Jun 07, 2011
0.1
Single pulse
0.01
100
μ
1m
10 m 100 m
1
10
PW - Pulse Width - s
100
1000
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