NP40N10YDF Datasheet, PDF (6/11 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP40N10YDF, NP40N10VDF, NP40N10PDF
100
90
80
70
60
50
40
30
20
10
0
0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VGS = 10 V
5.0 V
4.5 V
Pulsed
1
2
3
4
5
6
V_DS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE
vs. CHANNEL TEMPERATURE
2.5
VDS = VGS
ID = 250 μA
2
1.5
1
0.5
0
-100 -50
0
50 100 150 200
T_ch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
60
VGS = 4.5 V
50
5.0 V
40
10 V
30
20
10
Pulsed
0
0.1
1
10
100
I_D - Drain Current - A
R07DS0361EJ0100 Rev.1.00
Jun 07, 2011
Chapter Title
FORWARD TRANSFER CHARACTERISTICS
100
VDS = 10 V
Pulsed
10
1
0.1
0.01
0.001
0
1
2
TA = −55°C
−25°C
25°C
75°C
100°C
125°C
150°C
175°C
3
4
5
V_GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs. DRAIN
CURRENT
100
TA = −55°C
−25°C
25°C
75°C
100°C
125°C
10
150°C
175°C
1
0.01
VDS = 5 V
Pulsed
0.1
1
10
100
I_D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
45
40
ID = 40 A
35
20 A
30
8A
25
20
15
10
5
Pulsed
0
0
5
10
15
20
V_GS - Gate to Source Voltage - V
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