NP40N055EHE_15 Datasheet, PDF (7/12 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

NP40N055EHE, NP40N055KHE, NP40N055CHE, NP40N055DHE, NP40N055MHE, NP40N055NHE
Figure6. FORWARD TRANSFER CHARACTERISTICS
1000
Pulsed
100
10
1
0.1
2
TA = −55°C
25°C
75°C
150°C
175°C
VDS = 10 V
3
4
5
6
7
VGS - Gate to Source Voltage - V
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100 _Pulsed
VDS = 10 V
10
TA = 175°C
75°C
1
25°C
−55°C
0.1
0.01
0.01
0.1
1
10
100
ID - Drain Current - A
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
50
Pulsed
40
30
20
VGS = 10 V
10
0
0.1
1
10
100
ID - Drain Current - A
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
120
100
80
VGS =10 V
60
40
20
Pulsed
0
0
1
2
3
4
5
VDS - Drain to Source Voltage - V
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
Pulsed
40
30
20
ID = 20 A
10
0
0 ^{2 4 6 8 10 12 14 16 18}
VGS - Gate to Source Voltage - V
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = VGS
4.0
ID = 250 μA
3.0
2.0
1.0
0
−50
0
50
100 150
Tch - Channel Temperature - °C
Data Sheet D14092EJ6V0DS
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