NP40N055EHE_15 Datasheet, PDF (6/12 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

NP40N055EHE, NP40N055KHE, NP40N055CHE, NP40N055DHE, NP40N055MHE, NP40N055NHE
TYPICAL CHARACTERISTICS (TA = 25°C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
TC - Case Temperature - °C
Figure.3 FORWARD BIAS SAFE OPERATING AREA
1000
100
10
R^D_(V^{S(GonS) =Lim10iteVd)}
ID(pulse)
ID(DC)
LiPmoitweder
DC
Dissipation
1 _ms
PW ₌
100 _μs
10
μ_s
1
TC = 25°C
Single Pulse
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175 200
TC - Case Temperature - °C
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
60
49 mJ
50
44 mJ
40
IAS = 7 A
30
21 A
29 A
20
10
0.8 mJ
0
25 50
75 100 125 150 175
Starting Tch - Starting Channel Temperature - °C
1000
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
Rth(ch-A) = 83.3°C/W
10
Rth(ch-C) = 2.27°C/W
1
0.1
0.01
10 μ
100 μ
1m
10 m 100 m
1
PW - Pulse Width - s
Single Pulse
10
100
1000
4
Data Sheet D14092EJ6V0DS