NP40N055EHE_15 Datasheet, PDF (10/12 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

NP40N055EHE, NP40N055KHE, NP40N055CHE, NP40N055DHE, NP40N055MHE, NP40N055NHE
5)TO-220 (MP-25K)
10.0 ± 0.2 ^{φ 3.8 ± 0.2}
4.45 ± 0.2
1.3 ± 0.2
4
12 3
2.54 TYP.
1.27 ± 0.2
0.8 ± 0.1
2.54 TYP.
0.5 ± 0.2
2.5 ± 0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
6)TO-262 (MP-25SK)
10.0 ± 0.2
4.45 ± 0.2
1.3 ± 0.2
4
123
2.54 TYP.
1.27 ± 0.2
0.8 ± 0.1
2.54 TYP.
0.5 ± 0.2
2.5 ± 0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
8
Data Sheet D14092EJ6V0DS