N0300N_15 Datasheet, PDF (7/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
120
100
80
VGS = 4.5 V
60
40
10 V
20
ID = 2.0 A
Pulsed
0
-50 -25 0 25 50 75 100 125 150 175
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
100
VDD = 15 V
VGS = 10 V
RG = 6 Ω
td(off)
10
td(on)
tr
1
0.1
tf
1
10
100
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
1
0.1
0.01
0.001
0.0001
0
VGS = 0 V
Pulsed
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
N0300N
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
Ciss
100
Coss
Crss
VGS = 0 V
f = 1.0 MHz
10
0.01
0.1
1
10
100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
25
10
VDD = 24 V
20
15 V
8
6V
15
6
10
5
0
0
VGS
4
2
VDS
ID = 4.5 A
0
1234567
QG - Gate Charge - nC
Data Sheet D19781EJ1V0DS
5