N0300N_15 Datasheet, PDF (5/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

N0300N
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
10
R^D₍^S_V^(oGnS)
L=im4 _.i5t ^eVd)
ID(DC)
ID(pulse)
PW
= _{1i00 μs}
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
1.5
Mounted on FR-4 board of
1.25
50 mm x 50 mm x 1.6 mmt
1
0.75
0.5
0.25
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature - °C
1
1 ms
10 ms
0.1
0.01
Single Pulse
Mounted on FR-4 board of
50 mm x 50 mm x 1.6 mmt
0.1
1
100 ms
5s
10
100
VDS - Drain to Source Voltage - V
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Without board
100
Mounted on FR-4 board of
50 mm x 50 mm x 1.6 mmt
10
1
1m
10 m
100 m
1
10
PW - Pulse Width - s
Single Pulse
100
1000
Data Sheet D19781EJ1V0DS
3