N0300N_15 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

N0300N
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
Gate Leakage Current
IGSS
VGS = ±16 V, VDS = 0 V
Gate to Source Cut-off Voltage
Forward Transfer Admittance ^Note
Drain to Source On-state Resistance ^Note
VGS(off)
| yfs |
RDS(on)1
VDS = 10 V, ID = 1.0 mA
VDS = 10 V, ID = 2.0 A
VGS = 10 V, ID = 2.0 A
RDS(on)2
VGS = 4.5 V, ID = 2.0 A
Input Capacitance
Ciss
VDS = 10 V,
Output Capacitance
Coss
VGS = 0 V,
Reverse Transfer Capacitance
Crss
f = 1.0 MHz
Turn-on Delay Time
td(on)
VDD = 15 V, ID = 2.0 A,
Rise Time
tr
VGS = 10 V,
Turn-off Delay Time
td(off)
RG = 6 Ω
Fall Time
tf
Total Gate Charge
Body Diode Forward Voltage ^Note
QG
VF(S-D)
VDD = 24 V, VGS = 10 V, ID = 4.5 A
IF = 4.5 A, VGS = 0 V
Note Pulsed
TEST CIRCUIT SWITCHING TIME
MIN.
1.0
1.0
TYP.
38
48
350
65
30
6.5
3.0
16.5
3.0
7.4
0.9
MAX.
1
±10
2.5
50
83
UNIT
μA
μA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
V
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 μs
Duty Cycle ≤ 1%
RL
VDD
VGS
VGS
Wave Form
0 ^10%
VGS
90%
ID
90%
ID
Wave Form
0 ^10%
td(on)
ID
tr td(off)
90%
10%
tf
ton
toff
2
Data Sheet D19781EJ1V0DS