N0300N_15 Datasheet, PDF (6/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

N0300N
18
16
14
12
10
8
6
4
2
0
0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
10 V
VGS = 4.5 V
Pulsed
0.4 0.8 1.2 1.6
2
VDS - Drain to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
3
VDS = 10 V
2.5
ID = 1.0 mA
2
1.5
1
0.5
0
-50 -25 0 25 50 75 100 125 150 175
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
120
Pulsed
100
80
60
VGS = 4.5 V
40
10 V
20
0
0.1
1
10
100
ID - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
10
1
TA = 125°C
0.1
75°C
25°C
0.01
−25°C
0.001
0.0001
0
VDS = 10 V
Pulsed
1
2
3
4
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
TA = −25°C
25°C
1
0.1
75°C
125°C
0.01
0.001
VDS = 10 V
Pulsed
0.01 0.1
1
10 100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
200
180
ID = 2.0 A
Pulsed
160
140
120
100
80
60
40
20
0
0
4
8
12
16
VGS - Gate to Source Voltage - V
4
Data Sheet D19781EJ1V0DS