HAT3038R Datasheet, PDF (7/11 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOSFET

HAT3038R
Static Drain to Source on State Resistance
vs. Temperature
200
Pulse Test
160
I_D = –0.5 A, –1 A, –2 A
120
V_GS = 4.5 V
80
–0.5 A, –1 A, –2 A
40
10 V
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Dynamic Input Characteristics
0
0
V_DD = –25 V
–20
–50 V
–4
Typical Capacitance vs.
Drain to Source Voltage
10000
5000
V_GS = 0
f = 1 MHz
2000
1000
Ciss
500
200
100
Coss
50
Crss
20
10
0 –10 –20 –30 –40 –50
Drain to Source Voltage V_DS (V)
Reverse Drain Current vs.
Source to Drain Voltage
–10
–5 V
–40
V_DS
–60 _{VDD = –50 V}
–25 V
V_GS
–80
–100
0
I_D = –4 A
8
16 24 32
Gate Charge Qg (nC)
–8
–12
–16
–20
40
–5
V_GS = 0V, 5 V
Pulse Test
0
–0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage V_SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
10
1 ^D=1
0.5
0.2
0.1 ^0.1
0.05
0.02
0.01
0.01
1shot ^pulse
θch - f(t) = γs (t) x θch - f
θch - f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
PDM
PW
T
D=
PW
T
0.001
10 μ 100 μ 1 m 10 m 100 m 1
10
100 1000 10000
Pulse Width PW (S)
R07DS1375EJ0301 Rev.3.01
Jan 20, 2017
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