HAT3038R Datasheet, PDF (6/11 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOSFET

HAT3038R
• P Channel
Power vs. Temperature Derating
4.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
3.0
2.0
1.0
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
–10
-10 V
Pulse Test
-4.5 V
-3.0 V
–5
-2.8 V
-2.6 V
V_GS = -2.4 V
0
–5
–10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs
–500
Gate to Source Voltage
Pulse Test
–400
–300
–200
I_D = –2 A
–100
–1 A
–0.5 A
0
–4 –8 –12 –16 –20
Gate to Source Voltage V_GS (V)
Maximum Safe Operation Area
-100
-10
-1
-0.1
10
OtlihmpisietearadretibDaoynCisRiOn_D^p_S^e₍^r_o^a_n^t₎^ioPnW(P=W1҇^{0 m11Ns0}_o^m_t⁽_es1s1)4^s0h0otμ)s
μ_s
-0.01
Ta = 25°C
-0.001 ^{1 shot Pulse}
-0.1
-1
-10
-100
Drain to Source Voltage V_DS (V)
Note 4 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Transfer Characteristics
–10
V_DS = 10 V
Pulse Test
–8
–6
–4
Tc = 75°C
–2
25°C
-25°C
0
–1 –2 –3 –4 –5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
1000
vs. Drain Current
Pulse Test
100 ^VGS ^{= –4.5 V}
–10 V
10
–0.1
–1
–10
Drain Current I_D (A)
R07DS1375EJ0301 Rev.3.01
Jan 20, 2017
Page 6 of 9