HAT3038R Datasheet, PDF (2/11 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOSFET

HAT3038R
Electrical Characteristics
• N Channel
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS
60
Gate to source leak current
IGSS
—
Zero gate voltage drain current
IDSS
—
Gate to source cutoff voltage
VGS(off)
1.0
Static drain to source on state
resistance
RDS(on)
—
RDS(on)
—
Forward transfer admittance
|yfs|
6.6
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd
—
Turn-on delay time
td(on)
—
Rise time
tr
—
Turn-off delay time
td(off)
—
Fall time
tf
—
Body–drain diode forward voltage
VDF
—
Body–drain diode reverse recovery
trr
—
time
Notes: 3. Pulse test
Typ
—
—
—
—
48
55
11
675
95
35
5.2
1.8
2.1
11
8
40
4.5
0.82
40
Max
—
± 0.1
1
2.5
60
80
—
—
—
—
—
—
—
—
—
—
—
1.07
—
Unit
V
A
A
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 60 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 2.5 A, VGS = 10 V ^Note3
ID = 2.5 A, VGS = 4.5 V ^Note3
ID = 2.5 A, VDS = 10 V ^Note3
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 25 V
VGS = 4.5 V
ID = 5 A
VGS = 10 V, ID = 2.5 A
VDD  30 V
RL = 12 
Rg = 4.7 
IF = 5 A, VGS = 0 ^Note3
IF = 5 A, VGS = 0
diF/ dt = 100 A/ s
• P Channel
Item
Drain to source breakdown
voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Notes: 3. Pulse test
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
–60
—
—
–1.0
—
—
4.5
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
70
82
7.5
1330
115
75
10.5
3.3
4.5
18
12
52
5
–0.83
40
Max
—
±0.1
–1
–2.5
88
110
—
—
—
—
—
—
—
—
—
—
—
–1.08
—
(Ta = 25°C)
Unit
Test Conditions
V ID = –10 mA, VGS = 0
A VGS = -20,+10 V, VDS = 0
A VDS = –60 V, VGS = 0
V VDS = –10 V, I D = –1 mA
m ID = –2 A, VGS = –10 V ^Note3
m ID = –2 A, VGS = – 4.5 V ^Note3
S
ID = –2 A, VDS = –10 V ^Note3
pF VDS = –10 V
pF ^VGS ^{= 0}
pF ^{f = 1MHz}
nC VDD = –25 V
nC ^VGS ^{= –4.5 V}
nC ^{ID = -4 A}
ns VGS = –10 V, ID = –2 A
ns ^VDD ^{ –30 V}
ns ^{RL = 15 }
ns ^{Rg = 4.7 }
V
IF = –4 A, VGS = 0 ^Note3
ns IF = –4 A, VGS = 0
diF/ dt =100A/µs
R07DS1375EJ0301 Rev.3.01
Jan 20, 2017
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