HAT3038R Datasheet, PDF (4/11 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOSFET

HAT3038R
Static Drain to Source on State Resistance
vs. Temperature
250
Pulse Test
200
150
5A
I_D = 1 A, 2 A
100
V_GS = 4.5 V
50
1 A, 2 A, 5 A
10 V
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Dynamic Input Characteristics
100
I_D=5A
80
V _DD = 50 V
25 V
60 _VDS
10 V
20
V_GS
16
12
40
8
1000
500
Typical Capacitance vs.
Drain to Source Voltage
Ciss
200
100
Coss
50
20
Crss
10
5
2
V_GS = 0
f = 1 MHz
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Reverse Drain Current vs.
Source to Drain Voltage
10
10 V
5V
5
V_GS = 0 V, –5 V
20
V _DD = 50V
4
25V
10V
0
0
4
8
12 16 20
Gate Charge Qg (nc)
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
10
D=1
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01 _{1shot pulse}
θch - f(t) = γs (t) x θch - f
θch - f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
PDM
PW
D=
PW
T
T
0.001
10 μ 100 μ 1 m 10 m 100 m 1
10
100 1000 10000
Pulse Width PW (S)
R07DS1375EJ0301 Rev.3.01
Jan 20, 2017
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