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HAT1038R_15 Datasheet, PDF (7/10 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching | |||
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HAT1038R, HAT1038RJ
Preliminary
Reverse Drain Current vs.
Source to Drain Voltage
â10
â8
â6
â10 V
â4
â5 V
VGS = 0, 5 V
Maximum Avalanche Energy vs.
Channel Temperature Derating
2.5
IAP = â3.5 A
VDD = â25 V
2.0
L = 100 μH
duty < 0.1 %
Rg ⥠50 Ω
1.5
1.0
â2
0.5
Pulse Test
0
0 â0.4 â0.8 â1.2 â1.6 â2.0
Source to Drain Voltage VSD (V)
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
10
D=1
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01 0.01
0.001
1shot pulse
θch â f (t) = γ s (t) ⢠θch â f
θch â f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 Ã 40 Ã 1.6 mm)
PDM
D=
PW
T
PW
T
0.0001
10 μ 100 μ 1 m
10 m 100 m
1
10
Pulse Width PW (S)
100 1000 10000
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
10
D=1
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01 0.01
0.001
1shot pulse
0.0001
10 μ 100 μ 1 m
θch â f (t) = γ s (t) ⢠θch â f
θch â f = 166°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 Ã 40 Ã 1.6 mm)
PDM
D = PW
T
PW
T
10 m 100 m
1
10
Pulse Width PW (S)
100 1000 10000
REJ03G1150-0600 Rev.6.00 Aug 25, 2009
Page 5 of 7
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