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HAT1038R_15 Datasheet, PDF (3/10 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching | |||
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HAT1038R, HAT1038RJ
Silicon P Channel Power MOS FET
High Speed Power Switching
Features
⢠For Automotive Application (at Type Code "J")
⢠Low on-resistance
⢠Capable of 4 V gate drive
⢠High density mounting
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
78
DD
56
DD
87 65
1 234
2
4
G
G
S1
MOS1
S3
MOS2
Preliminary
REJ03G1150-0600
Rev.6.00
Aug 25, 2009
1, 3
2, 4
5, 6, 7, 8
Source
Gate
Drain
Absolute Maximum Ratings
Item
Symbol
Value
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
HAT1038R
HAT1038RJ
Avalanche energy
HAT1038R
HAT1038RJ
Channel dissipation
Channel dissipation
VDSS
VGSS
ID
ID (pulse) Note 1
IDR
IAP Note 4
EAR Note 4
Pch Note 2
Pch Note 3
â60
±20
â3.5
â28
â3.5
â
â3.5
â
1.05
2
3
Channel temperature
Tch
150
Storage temperature
Tstg
â55 to +150
Notes: 1. PW ⤠10 μs, duty cycle ⤠1%
2. 1 Drive operation: When using the glass epoxy board (FR4 40 à 40 à 1.6 mm), PW ⤠10 s
3. 2 Drive operation: When using the glass epoxy board (FR4 40 à 40 à 1.6 mm), PW ⤠10 s
4. Value at Tch = 25°C, Rg ⥠50 Ω
(Ta = 25°C)
Unit
V
V
A
A
A
â
A
â
mJ
W
W
°C
°C
REJ03G1150-0600 Rev.6.00 Aug 25, 2009
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